gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 1 / 7 version 1.0 product features applications ? gan on sic chip on board ? surface mount hybrid type ? asymmetric doherty amplifier ? high efficiency ? no matching circuit needed ? rf sub-systems ? base station ? rrh ? 4g/ lte system ? small cell description accommodating the future of 4g/lte small cells, rfhic introduces RTH20007-10 amplifier fabricated using an advanced high power density gallium nitride (gan) semiconductor process. this high pe rformance amplifier achieves high efficiency of 45%, and power s 7w over the frequency range from 1930mhz to 1990mhz. integrat ed with asymmetrical doherty configurations, rth series is packaged in a very small form-factor 28 x 19 x 4.8mm on ain (aluminum nitride) board which provides excellent thermal dissipati on. electrical specifications @ v ds =31v, ta=25 parameter unit min typ max condition frequency range mhz 1930 - 1990 zs = zl = 50 ohm power gain db 13.5 15.5 - carrier idq = 160ma vgp = -4.8v gain flatness -3.0 - 3.0 input return loss -6 -9 - pout @ average dbm - 38.5 - pout @ psat dbm 46 47 - pulse width=20us, duty10% aclr @ bw 10mhz lte (papr 7.5db) dbc - -27 - non dpd - -53 - with dpd drain efficiency % 40 45 - pout @ average carrier idq ma - 220 - total ids - 500 - supply voltage v - -3.0 -2.0 vgc - -5.0 -4.0 vgp 30.5 31 - vds caution the drain voltage must be supplied to the device after the gate voltage is supplied turn on :turn on the gate voltage supply and last turn on the drain voltage supplies turn off :turn off the drain voltage and last turn off the gate voltage note 1. aclr measured pout=38.5dbm @ fc 10mhz / 9.015mhz lte 10mhz 1fa papr=7.5db @ 0.01% probability on ccdf, (dpd engine: optichron op6180) mechanical specifications parameter unit typ remark mass g 5 - dimension L 28 x 19 x 4.8 - package type : np-8cl
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 version 1.0 absolute maximum ratings parameter unit rating symbol gate-source voltage v -10 ~ 0 vgc vgp drain-source voltage v 50 vds gate current ma 4.0 igs operating junction temperature c 225 t j operating case temperature c -30 ~ 85 t c storage temperature c -40 ~ 100 t stg operating voltages parameter unit min typ max symbol drain voltage v 30.5 31 - vds gate voltage (on-stage) v - vgc @carrier idq -2 vgc gate voltage (on-stage) v - vgp -2 vgp gate voltage (off-stage) v - -8 - vgc gate voltage (off-stage) v - -8 - vgp block diagram *note directional coupler, isolator and drive amplifier must be located close to the dut(device under test) is needed for best perfo rmance.
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 3 / 7 version 1.0 application circuit part list location model no. spec. maker c3, c4 1812c225k101ct 2.2uf / 100v walsin c1, c2 c3216x7r1c106k 10uf / 16v tdk evaluation board ro4350b 2layer, 30mil rogers
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 4 / 7 version 1.0 performance charts * bias condition @ carrier idq= 160ma, vgp= 4.8v, ta=25 power gain vs. frequency psat vs. frequency 12 13 14 15 16 17 18 1.93 1.94 1.95 1.96 1.97 1.98 1.99 power gain [db] frequency[ghz] power gain @pout=38.5dbm 44 45 46 47 48 49 50 1.93 1.94 1.95 1.96 1.97 1.98 1.99 psat [dbm] frequency[ghz] psat @pulse width 20us (duty 10%) aclr vs. frequency drain efficiency vs. frequency -35 -33 -31 -29 -27 -25 1.93 1.94 1.95 1.96 1.97 1.98 1.99 aclr [dbc] frequency[ghz] aclr @lte 10mhz(w/o dpd) 38 40 42 44 46 48 50 1.93 1.94 1.95 1.96 1.97 1.98 1.99 efficiency [%] frequency[ghz] efficiency aclr with digital predis tortion ids vs. frequency -70 -60 -50 -40 -30 -20 -10 0 10 20 1935 1943 1952 1960 1968 1977 1985 aclr [dbc] frequency[mhz] w/o dpd w dpd *dpd engine: optichron op6180 450 470 490 510 530 550 1.93 1.94 1.95 1.96 1.97 1.98 1.99 ids[ma] frequency[ghz] ids @pout=38.5dbm -
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 5 / 7 version 1.0 package dimensions (type: np-8cl) * unit: mm[inch] | tolerance: 0.15[.008] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 gnd 4 vgp 7 gnd 10 vds 2 rf input 5 gnd 8 rf output 11 gnd 3 gnd 6 vds 9 gnd 12 vgc recommended pattern recommended mounting configuration * mounting configuration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove heat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting scre ws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance .
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 6 / 7 version 1.0 precautions this product is a gallium nitride transistor. the gallium nitride transistor requires a negative voltage bias which operates alongside a positive voltage bias. these biases are applied in accordance to the sequence during turn-on and turn-off. the pallet amplifier does not have a built-in bias sequence circ uit. therefore, users need to either apply positive voltages an d negative voltages in the required sequence, or ad d an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn-on 1. connect gnd. 2. apply gate voltage (vgc and vgp) 3. apply drain voltage (vds) 4. apply the rf power. during turn-off 1. turn off rf power. 2. turn off drain voltage (vds), and then, turn off the gate voltage (vgc and vgp) 3. remove all connections. turn on turn off - sequence timing diagram -
gan doherty hybrid amplifier RTH20007-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all specifications may change without notice u s facility : 919-677-8780 / sales@rfhicusa.com 7 / 7 version 1.0 reflow profile * reflow oven settings zone a b c d e f temperature(c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec reflow cycle limit= 1time * measured reflow profile ordering information part number package design RTH20007-10 -r (reel) -b (bulk) -evb (evaluation board) revision history part number release date version modification data sheet status RTH20007-10 2013.11.15 1.0 electrical specifications (1p) - RTH20007-10 2013.02.25 0.5 package dimension preliminary RTH20007-10 2013.01.15 0.3 application circuit preliminary rfhic corporation reserves the right to make changes to any prod ucts herein or to discontinue any product at any time without n otice. while product specifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buy ers to verify that the information they are using is accurat e before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including wi thout limitation consequential or incidental damages. rfhic products are not intended for use in life support equipment or application where malfunction of the product can be expect ed to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall i ndemnify, protect and hold rfhic corporat ion and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. sales, inquiries and support should be directed to the local au thorized geographic distributor for rfhic corporation. for custo mers in the us, please contact the us sales team at 919- 677-8780. for all other inquiries, please contact the international sales team at 82-31-250-5078.
|
